IPB65R150CFD概述
D2PAK N-CH 650V 22.4A
Summary of Features:
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650V technology with integrated fast body diode
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Limited voltage overshoot during hard commutation
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Significant Q g reduction compared to 600V CFD technology
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Tighter R DSON max to R DSon typ window
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Easy to design-in
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Lower price compared to 600V CFD technology
Benefits:
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Low switching losses due to low Q rr at repetitive commutation on body diode
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Self limiting di/dt and dv/dt
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Low Q oss
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Reduced turn on and turn of delay times
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Outstanding CoolMOS™ quality
Target Applications:
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Telecom
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Server
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Solar
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HID lamp ballast
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LED lighting
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eMobility
IPB65R150CFD中文资料参数规格 技术参数
极性 N-CH
耗散功率 195.3 W
漏源极电压Vds 650 V
连续漏极电流Ids 22.4A
上升时间 7.6 ns
下降时间 5.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
外形尺寸
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
其他
产品生命周期 Active
包装方式 Tape & Reel TR
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
在线购买IPB65R150CFD 型号: IPB65R150CFD
描述:D2PAK N-CH 650V 22.4A