IRS2001MPBF

芯片, 栅极驱动器, 高/低压侧, 16MLPQ

The is a high voltage high speed power MOSFET and IGBT high and low Side Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V.

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Floating channel designed for bootstrap operation

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Tolerant to negative transient voltage dV/dt immune

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Under-voltage lockout

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3.3, 5 and 15V Logic compatible

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Cross-conduction prevention logic

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Matched propagation delay for both channels

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Outputs in phase with inputs