IRLML2803PBF

INFINEON  IRLML2803PBF  晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V

The is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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Low profile <1.1mm

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Ultra low on-resistance

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±20V Gate-source voltage

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Halogen-free