INFINEON IRLML2402PBF 晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
The is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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- Industry-standard pinout
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- MSL1, Consumer qualification
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- Low profile <1.1mm
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- Fast switching speed
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- Ultra low on resistance
针脚数 3
漏源极电阻 0.25 Ω
极性 N-CH
耗散功率 540 mW
阈值电压 700 mV
漏源极电压Vds 20 V
连续漏极电流Ids 1.2A
上升时间 9.5 ns
输入电容Ciss 110pF @15VVds
下降时间 4.8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 540 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23
封装 SOT-23
材质 Silicon
产品生命周期 Active
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRLML2402PBF Infineon 英飞凌 | 当前型号 | 当前型号 |
IRLML2402 英飞凌 | 完全替代 | IRLML2402PBF和IRLML2402的区别 |
IRLML2402GPBF 英飞凌 | 完全替代 | IRLML2402PBF和IRLML2402GPBF的区别 |
IRLML2402TRPBF-1 英飞凌 | 完全替代 | IRLML2402PBF和IRLML2402TRPBF-1的区别 |