INFINEON IPN60R3K4CEATMA1 功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V 新
Description:
**Cost-effective drop-in replacement for DPAK**
is growing the portfolio of CoolMOS™ CE with the SOT-223 package as a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Summary of Features:
Target Applications:
针脚数 3
漏源极电阻 3.06 Ω
极性 N-Channel
耗散功率 5 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 2.6A
上升时间 10 ns
输入电容Ciss 93pF @100VVds
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 5W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-261-4
长度 6.5 mm
宽度 3.5 mm
高度 1.6 mm
封装 TO-261-4
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC版本 2015/12/17
ECCN代码 EAR99