INFINEON IPN50R950CEATMA1 晶体管, MOSFET, N沟道, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 V 新
Description:
**Cost-effective drop-in replacement for DPAK**
is growing the portfolio of CoolMOS™ CE with the SOT-223 package as a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Summary of Features:
Target Applications:
通道数 1
针脚数 3
漏源极电阻 0.86 Ω
极性 N-Channel
耗散功率 5 W
阈值电压 3 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 4.3A
上升时间 4.9 ns
输入电容Ciss 231pF @100VVds
下降时间 19.5 ns
工作温度Max 150 ℃
工作温度Min 40 ℃
耗散功率Max 5000 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-223-4
长度 6.5 mm
宽度 3.5 mm
高度 1.6 mm
封装 SOT-223-4
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99