IPU60R1K0CE概述
600V,4.3A,N沟道功率MOSFET
Summary of Features:
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Narrow margins between typical and max R DSon
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Reduced energy stored in output capacitance E oss
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Good body diode ruggedness and reduced reverse recovery charge Q rr
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Optimized integrated R g
Benefits:
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Low conduction losses
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Low switching losses
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Suitable for hard and soft switching
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Easy controllable switching behavior
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Improved efficiencyand consequent reduction of power consumption
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Less design in effort
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Easy to use
Target Applications:
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Laptop and notebook adapter
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Low power charger
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Lighting
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LCD and LED TV
IPU60R1K0CE中文资料参数规格 技术参数
极性 N-CH
漏源极电压Vds 600 V
连续漏极电流Ids 4.3A
上升时间 8 ns
下降时间 13 ns
封装参数
安装方式 Through Hole
封装 TO-251-3
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
在线购买IPU60R1K0CE 型号: IPU60R1K0CE
制造商:
Infineon
英飞凌
描述:600V,4.3A,N沟道功率MOSFET