IR21363S

IR21363S图片1
IR21363S概述

MOSFET DRVR 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Inv 28Pin SOIC W

Summary of Features:

.
Floating channel designed for bootstrap operation
.
Fully operational to +600 V
.
Tolerant to negative transient voltage, dV/dt immune
.
Gate drive supply range from 12 V to 20 V
.
Undervoltage lockout for all channels
.
Over-current shutdown turns off all six drivers
.
Independent 3 half-bridge drivers
.
Matched propagation delay for all channels
.
Cross-conduction prevention logic
.
Low side output out of phase with inputs. High side outputs out of phase
.
3.3 V logic compatible
.
Lower di/dt gate drive for better noise immunity
.
Externally programmable delay for automatic fault clear
.
Variations include IR21363
IR21363S中文资料参数规格
封装参数

封装 SOIC

外形尺寸

封装 SOIC

其他

产品生命周期 Active

符合标准

RoHS标准 Non-Compliant

含铅标准 Lead Free

数据手册

IR21363S引脚图与封装图
IR21363S电路图
在线购买IR21363S
型号: IR21363S
制造商: Infineon 英飞凌
描述:MOSFET DRVR 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Inv 28Pin SOIC W
替代型号IR21363S
型号/品牌 代替类型 替代型号对比

IR21363S

Infineon 英飞凌

当前型号

当前型号

IR21363JPBF

英飞凌

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IR21363S和IR21363JPBF的区别

IR21363SPBF

英飞凌

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IR21363S和IR21363SPBF的区别

IR21363J

英飞凌

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IR21363S和IR21363J的区别

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