IPL65R1K0C6S

IPL65R1K0C6S图片1
IPL65R1K0C6S概述

Thin-PAK N-CH 650V 4.2A

Description:

The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height.

This significantly smaller package size in combination with its benchmark low parasitics inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The ThinPAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK.

The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behavior and EMI.

Summary of Features:

.
Small footprint 5x6mm²
.
Low profile 1mm
.
Low parasitic inductance
.
RoHS compliant
.
Halogen free mold compound

Benefits:

.
Reduced board space consumption
.
Increased power density
.
Short commutation loop
.
Easy to use products
.
Environmentally friendly

Target Applications:

 

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Adapter
.
Consumer
.
Lighting
IPL65R1K0C6S中文资料参数规格
技术参数

极性 N-CH

耗散功率 34.7 W

漏源极电压Vds 650 V

连续漏极电流Ids 4.2A

上升时间 5.2 ns

输入电容Ciss 328pF @100VVds

下降时间 13.6 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 34700 mW

封装参数

引脚数 8

封装 Thin-Pak

外形尺寸

封装 Thin-Pak

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买IPL65R1K0C6S
型号: IPL65R1K0C6S
描述:Thin-PAK N-CH 650V 4.2A

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