IPA65R650CE概述
650V,7A,N沟道功率MOSFET
Summary of Features:
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Narrow margins between typical and max R DSon
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Reduced energy stored in output capacitance E oss
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Good body diode ruggedness and reduced reverse recovery charge Q rr
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Optimized integrated R g
Benefits:
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Low conduction losses
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Low switching losses
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Suitable for hard and soft switching
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Easy controllable switching behavior
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Improved efficiencyand consequent reduction of power consumption
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Less design in effort
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Easy to use
Target Applications:
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Laptop and notebook adapter
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Low power charger
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Lighting
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LCD and LED TV
IPA65R650CE中文资料参数规格 技术参数
极性 N-CH
耗散功率 36 W
漏源极电压Vds 650 V
漏源击穿电压 650 V
连续漏极电流Ids 7A
上升时间 8 ns
输入电容Ciss 440pF @100VVds
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 36000 mW
外形尺寸
长度 10.65 mm
宽度 4.85 mm
高度 16.15 mm
封装 TO-220-3
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
在线购买IPA65R650CE 型号: IPA65R650CE
描述:650V,7A,N沟道功率MOSFET