IPA65R650CE

IPA65R650CE图片1
IPA65R650CE图片2
IPA65R650CE概述

650V,7A,N沟道功率MOSFET

Summary of Features:

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Narrow margins between typical and max R DSon
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Reduced energy stored in output capacitance E oss
.
Good body diode ruggedness and reduced reverse recovery charge Q rr
.
Optimized integrated R g

Benefits:

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Low conduction losses
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Low switching losses
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Suitable for hard and soft switching
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Easy controllable switching behavior
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Improved efficiencyand consequent reduction of power consumption
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Less design in effort
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Easy to use

Target Applications:

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Laptop and notebook adapter
.
Low power charger
.
Lighting
.
LCD and LED TV
IPA65R650CE中文资料参数规格
技术参数

极性 N-CH

耗散功率 36 W

漏源极电压Vds 650 V

漏源击穿电压 650 V

连续漏极电流Ids 7A

上升时间 8 ns

输入电容Ciss 440pF @100VVds

下降时间 11 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 36000 mW

封装参数

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.65 mm

宽度 4.85 mm

高度 16.15 mm

封装 TO-220-3

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买IPA65R650CE
型号: IPA65R650CE
描述:650V,7A,N沟道功率MOSFET

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