IS42S16400B-7TL

IS42S16400B-7TL图片1
IS42S16400B-7TL概述

DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54Pin TSOP-II

OVERVIEW

ISSI"s 64Mb Synchronous DRAM IS42S16400B is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

• Clock frequency: 166, 143 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length

– 1, 2, 4, 8, full page

• Programmable burst sequence: Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CASlatency 2, 3 clocks

• Burst read/write operations capability

• Burst termination by burst stop and precharge command

• Byte controlled by LDQM and UDQM

• Industrial temperature availability

• Package:400-mil 54-pin TSOP II

• Lead-free package is available

IS42S16400B-7TL中文资料参数规格
技术参数

位数 16

存取时间Max 6ns, 9ns

工作温度Max 70 ℃

工作温度Min 0 ℃

封装参数

安装方式 Surface Mount

引脚数 54

封装 TSOP-54

外形尺寸

封装 TSOP-54

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买IS42S16400B-7TL
型号: IS42S16400B-7TL
制造商: Integrated Silicon SolutionISSI
描述:DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54Pin TSOP-II
替代型号IS42S16400B-7TL
型号/品牌 代替类型 替代型号对比

IS42S16400B-7TL

Integrated Silicon SolutionISSI

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当前型号

IS42S16400B-7T

Integrated Silicon SolutionISSI

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IS42S16400B-7TL和IS42S16400B-7T的区别

IS42S16400A-7T

Integrated Silicon SolutionISSI

完全替代

IS42S16400B-7TL和IS42S16400A-7T的区别

IS42S16400B-7TL-TR

Integrated Silicon SolutionISSI

完全替代

IS42S16400B-7TL和IS42S16400B-7TL-TR的区别

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