OptiMOS㈢功率三极管 OptiMOS㈢ Power-Transistor
Summary of Features:
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- N-channel Logic Level - Enhancement mode
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- Automotive AEC Q101 qualified
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- MSL1 up to 260°C peak reflow
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- 175°C operating temperature
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- Green package lead free
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- Ultra low Rdson
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- 100% Avalanche tested
Benefits:
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- world"s lowest RDS at 75V on in planar technology
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- highest current capability
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- lowest switching and conduction power losses for highest thermal efficiency
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- robust packages with superior quality and reliability
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- Optimized total gate charge enables smaller driver output stages
通道数 1
极性 N-CH
阈值电压 1.2 V
漏源极电压Vds 75 V
连续漏极电流Ids 100A
上升时间 56 ns
输入电容Ciss 5400pF @25VVds
额定功率Max 300 W
下降时间 22 ns
安装方式 Surface Mount
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Solenoids control, Valves control, Lighting, Single-ended motors
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPB100N08S2L-07 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPB100N08S2-07 英飞凌 | 功能相似 | IPB100N08S2L-07和IPB100N08S2-07的区别 |
SPB100N08S2-07 英飞凌 | 功能相似 | IPB100N08S2L-07和SPB100N08S2-07的区别 |
SPB100N08S2L-07 英飞凌 | 功能相似 | IPB100N08S2L-07和SPB100N08S2L-07的区别 |