先进的功率MOSFET Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
♦Logic-Level Gate Drive
♦Avalanche Rugged Technology
♦Rugged Gate Oxide Technology
♦Lower Input Capacitance
♦Improved Gate Charge
♦Extended Safe Operating Area
♦Lower Leakage Current: 10µA Max. @ VDS= 100V
♦Lower RDSON: 0.336ΩTyp.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRLI610A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQI4N20 飞兆/仙童 | 功能相似 | IRLI610A和FQI4N20的区别 |