IS61LV51216-10T

IS61LV51216-10T概述

SRAM 8Mb 512Kx16 10ns 3.3V

DESCRIPTION

The ISSIIS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time:

— 8, 10, and 12 ns

• CMOS low power operation

• Low stand-by power:

— Less than 5 mAtyp. CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperatures available

• Lead-free available

IS61LV51216-10T中文资料参数规格
技术参数

存取时间 10 ns

内存容量 8000000 B

工作温度Max 70 ℃

工作温度Min 0 ℃

电源电压Max 3.6 V

电源电压Min 3.135 V

封装参数

安装方式 Surface Mount

封装 TSOP-44

外形尺寸

封装 TSOP-44

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IS61LV51216-10T
型号: IS61LV51216-10T
制造商: Integrated Silicon SolutionISSI
描述:SRAM 8Mb 512Kx16 10ns 3.3V

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