N沟道 600V 37.9A
* Increased MOSFET dv/dt ruggedness * Extremely low losses due to very low FOM Rdson Qg and Eoss * Very high commutation ruggedness * Best in class RDSon /package * Easy to use/drive due to driver source pin for better control of the gate * Pb-free plating, Halogen free mold compound * Qualified for industrial grade applications according to JEDEC J-STD20 and JESD22 * 4-pin kelvin source concept
立创商城:
N沟道 600V 37.9A
得捷:
MOSFET N-CH 600V 37.9A TO247-4
贸泽:
MOSFET HIGH POWER_PRICE/PERFORM
艾睿:
Trans MOSFET N-CH 600V 37.9A 4-Pin4+Tab TO-247 Tube
安富利:
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction SJ principle and pioneered by Infineon Technologies. CoolMOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
极性 N-CH
耗散功率 278W Tc
漏源极电压Vds 600 V
连续漏极电流Ids 37.9A
上升时间 9 ns
输入电容Ciss 3330pF @100VVds
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 278W Tc
安装方式 Through Hole
引脚数 4
封装 TO-247-4
长度 16.13 mm
宽度 5.21 mm
高度 21.1 mm
封装 TO-247-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 PWM stages TTF, LLC for, PFC stages for, , telecom rectifier,
RoHS标准 RoHS Compliant
含铅标准 无铅