IPB65R125C7

IPB65R125C7概述

N-CH 650V 18A

Summary of Features:

.
650V voltage
.
Revolutionary best-in-class R DSon/package
.
Reduced energy stored in output capacitance Eoss
.
Lower gate charge Qg
.
Space saving through use of smaller packages or reduction of parts
.
12 years manufacturing experience in superjunction technology

Benefits:

.
Improved safety margin and suitable for both SMPS and solar inverter applications
.
Lowest conduction losses/package
.
Low switching losses
.
Better light load efficiency
.
Increasing power density
.
Outstanding CoolMOS™ quality

Target Applications:

 

.
Telecom
.
Server
.
Solar
.
PC power
IPB65R125C7中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 650 V

连续漏极电流Ids 18A

上升时间 15 ns

下降时间 8 ns

封装参数

封装 TO-263

外形尺寸

长度 10 mm

宽度 9.25 mm

高度 4.4 mm

封装 TO-263

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IPB65R125C7
型号: IPB65R125C7
描述:N-CH 650V 18A

锐单商城 - 一站式电子元器件采购平台