IPU50R950CEAKMA2概述
N-CH 500V 4.3A
Summary of Features:
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Reduced energy stored in output capacitance E oss
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High body diode ruggedness
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Reduced reverse recovery charge Q rr
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Reduced gate charge Q g
Benefits:
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Easy control of switching behavior
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Better light load efficiency compared to previous CoolMOS™ generations
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Cost attractive alternative compared to standard MOSFETs
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Outstanding quality and reliability of CoolMOS™ technology
Target Applications:
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Consumer
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Lighting
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PC silverbox
IPU50R950CEAKMA2中文资料参数规格 技术参数
极性 N-CH
耗散功率 53W Tc
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 4.3A
上升时间 4.9 ns
输入电容Ciss 231pF @100VVds
下降时间 19.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 53W Tc
封装参数
安装方式 Through Hole
封装 TO-251-3
外形尺寸
长度 6.73 mm
宽度 2.38 mm
高度 6.22 mm
封装 TO-251-3
符合标准
RoHS标准 RoHS Compliant
含铅标准 无铅
在线购买IPU50R950CEAKMA2 型号: IPU50R950CEAKMA2
描述:N-CH 500V 4.3A