IPT65R033G7XTMA1

IPT65R033G7XTMA1概述

晶体管, MOSFET, N沟道, 69 A, 650 V, 0.029 ohm, 10 V, 3.5 V

Description:

The CoolMOS™ C7 Gold series G7 for the first time brings together the benefits of the improved 650V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction PFC up to 3kW.

Summary of Features:

**CoolMOS™ C7 Gold**

.
Gives best-in-class FOM R DSon*E oss and R DSon*Q G
.
Enables best-in-class R DSon in smallest footprint

**TOLL package **

.
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance ~1nH
.
Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
.
Enables improved thermal performance R th

Benefits:

.
FOM R DSonxQ G is 14% better than previous 650V CoolMOS™ C7 enabling faster switching leading to higher efficiency
.
Power density trough BIC 33mΩ in 115mm 2 TOLL footprint
.
Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use
.
TOLL package is easy to use and has the highest quality standards
.
Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible

Target Applications:

.
SMPS
.
Telecom
.
Server
.
Solar
IPT65R033G7XTMA1中文资料参数规格
技术参数

通道数 1

针脚数 8

漏源极电阻 0.029 Ω

极性 N-CH

耗散功率 391 W

阈值电压 3 V

漏源极电压Vds 650 V

连续漏极电流Ids 69A

上升时间 8 ns

输入电容Ciss 5000pF @400VVds

下降时间 5 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 391000 mW

封装参数

引脚数 9

封装 HSOF-8

外形尺寸

长度 10.58 mm

宽度 10.1 mm

高度 2.4 mm

封装 HSOF-8

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买IPT65R033G7XTMA1
型号: IPT65R033G7XTMA1
描述:晶体管, MOSFET, N沟道, 69 A, 650 V, 0.029 ohm, 10 V, 3.5 V

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