IPL65R195C7

IPL65R195C7概述

MOSFET HIGH POWER BEST IN CLASS

Summary of Features:

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650V voltage
.
Revolutionary best-in-class R DSon/package
.
Reduced energy stored in output capacitance Eoss
.
Lower gate charge Qg
.
Space saving through use of smaller packages or reduction of parts
.
12 years manufacturing experience in superjunction technology

Benefits:

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Improved safety margin and suitable for both SMPS and solar inverter applications
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Lowest conduction losses/package
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Low switching losses
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Better light load efficiency
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Increasing power density
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Outstanding CoolMOS™ quality

Target Applications:

 

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Telecom
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Server
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Solar
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PC power
IPL65R195C7中文资料参数规格
技术参数

漏源极电压Vds 650 V

上升时间 5 ns

下降时间 16 ns

封装参数

封装 ThinPAK 8x8

外形尺寸

长度 8 mm

高度 1.10 mm

封装 ThinPAK 8x8

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

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型号: IPL65R195C7
描述:MOSFET HIGH POWER BEST IN CLASS

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