IPD60R600E6ATMA1

晶体管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V

Description:

CoolMOS™ E6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

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**600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3**

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**650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3**

Summary of Features:

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Easy control of switching behavior

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Very high commutation ruggedness 

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Extremely low losses due to very low Figure of Merit R DSON*Q g and E oss

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Easy to use

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Better light load efficiency compared to C3

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Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness

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Better price performance in comparison to previous CoolMOS™ generations

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More efficient, more compact, lighter and cooler

Benefits:

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Improved power density

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Improved reliability

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General purpose part can be used in both soft and hard switching topologies

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Better light load effciency

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Improved effciency in hard switching applications

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Improved ease-of-use

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Reduces possible ringing due to pcb layout and package parasitic effects

Target Applications:

 

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Consumer

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Adapter

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eMobility

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PFC stages for server & telecom

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SMPS

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PC power

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Solar

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Lighting