IRLML2502

HEXFET, N채널, Vd = 20V, Rds = 0.045Ω, Id = 4.2A, SOT-23패키지

Description

These N-Channel MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

• Ultra Low On-Resistance

• N-Channel MOSFET

• SOT-23 Footprint

• Low Profile <1.1mm

• Available in Tape and Reel

• Fast Switching