IRLR120N

IRLR120N概述

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and  ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Surface Mount

Straight Lead IRLU120N

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

IRLR120N中文资料参数规格
封装参数

封装 TO-252

外形尺寸

封装 TO-252

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IRLR120N
型号: IRLR120N
制造商: International Rectifier 国际整流器
描述:100V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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