IRL2505L

MOSFET N-CH 55V 104A TO-262

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of

applications.

Advanced Process Technology

Surface Mount IRL2505S

Low-profile through-hole

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Logic-Level Gate Drive