IS61C256AH-12TI

IS61C256AH-12TI图片1
IS61C256AH-12TI概述

Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, TSOP1-28

DESCRIPTION

The ISSIIS61C256AH is a very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum.

FEATURES

• High-speed access time: 10, 12, 15, 20, 25 ns

• Low active power: 400 mW typical

• Low standby power

— 250 µW typical CMOS standby

— 55 mW typical TTL standby

• Fully static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single 5V power supply

IS61C256AH-12TI中文资料参数规格
封装参数

封装 TSOP

外形尺寸

封装 TSOP

其他

产品生命周期 Active

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买IS61C256AH-12TI
型号: IS61C256AH-12TI
制造商: Integrated Silicon SolutionISSI
描述:Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, TSOP1-28
替代型号IS61C256AH-12TI
型号/品牌 代替类型 替代型号对比

IS61C256AH-12TI

Integrated Silicon SolutionISSI

当前型号

当前型号

IS61C256AL-12TLI

Integrated Silicon SolutionISSI

功能相似

IS61C256AH-12TI和IS61C256AL-12TLI的区别

CY7C199CN-12ZXC

赛普拉斯

功能相似

IS61C256AH-12TI和CY7C199CN-12ZXC的区别

CY7C199C-12ZXC

赛普拉斯

功能相似

IS61C256AH-12TI和CY7C199C-12ZXC的区别

锐单商城 - 一站式电子元器件采购平台