IRL60HS118

IRL60HS118图片1
IRL60HS118图片2
IRL60HS118概述

晶体管, MOSFET, N沟道, 18.5 A, 60 V, 0.0133 ohm, 10 V, 1.7 V

Description:

Available in three different voltage classes 60V, 80V and 100V, ’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.

Summary of Features:

.
Lowest FOM R DSon x Q g/gd
.
Optimized Q g, C oss, and Q rr for fast switching�
.
Logic level compatibility
.
Tiny PQFN 2x2mm package

Benefits:

.
Smallest package footprint
.
Higher power density designs
.
Higher switching frequency
.
Reduced parts count wherever 5V supplies are available
.
Driven directly from microcontrollers slow switching�
.
System cost reduction

Target Applications:

.
Wireless charging
.
Telecom
.
Adapter

IRL60HS118中文资料参数规格
技术参数

针脚数 6

漏源极电阻 0.0133 Ω

耗散功率 2.5 W

阈值电压 1.7 V

漏源极电压Vds 60 V

上升时间 21 ns

输入电容Ciss 660pF @25VVds

下降时间 5 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 11.5W Tc

封装参数

安装方式 Surface Mount

引脚数 6

封装 PG-TSDSON-6

外形尺寸

封装 PG-TSDSON-6

物理参数

材质 Silicon

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

数据手册

在线购买IRL60HS118
型号: IRL60HS118
描述:晶体管, MOSFET, N沟道, 18.5 A, 60 V, 0.0133 ohm, 10 V, 1.7 V

锐单商城 - 一站式电子元器件采购平台