晶体管, MOSFET, N沟道, 18.5 A, 60 V, 0.0133 ohm, 10 V, 1.7 V
Description:
Available in three different voltage classes 60V, 80V and 100V, ’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Summary of Features:
Benefits:
Target Applications:
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针脚数 6
漏源极电阻 0.0133 Ω
耗散功率 2.5 W
阈值电压 1.7 V
漏源极电压Vds 60 V
上升时间 21 ns
输入电容Ciss 660pF @25VVds
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 11.5W Tc
安装方式 Surface Mount
引脚数 6
封装 PG-TSDSON-6
封装 PG-TSDSON-6
材质 Silicon
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅