IPI051N15N5AKSA1

IPI051N15N5AKSA1概述

Differentiated Mosfets

Description:

The new OptiMOS™ 5 150 V power MOSFETs from are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DSon up to 25 percent compared to the next best alternative in SuperSO8 and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge Q rr = 26 nC in SuperSO8 increases commutation ruggedness.

 

Summary of Features:

.
Lower R DSon without compromising FOM gd and FOM oss
.
Lower output charge
.
Ultra-low reverse recovery charge
.
Increased commutation ruggedness
.
Higher switching frequency possible

Benefits:

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Reduced paralleling
.
Size reduction enabled with SuperSO8 best-in-class
.
Higher power density designs
.
More rugged products
.
System cost reduction
.
Improved EMI behavior
IPI051N15N5AKSA1中文资料参数规格
封装参数

引脚数 3

封装 TO-262-3

外形尺寸

长度 10.2 mm

宽度 4.5 mm

高度 9.45 mm

封装 TO-262-3

其他

产品生命周期 Active

包装方式 Tube

制造应用 Low voltage

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

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型号: IPI051N15N5AKSA1
描述:Differentiated Mosfets

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