晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0027 ohm, 10 V, 3.3 V
Description:
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance R DSon and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DSon of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Summary of Features:
Benefits:
针脚数 3
漏源极电阻 0.0027 Ω
耗散功率 179 W
阈值电压 3.3 V
漏源极电压Vds 100 V
上升时间 32 ns
输入电容Ciss 350pF @50VVds
下降时间 48 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 179000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Telecom, Battery management
RoHS标准
含铅标准 Lead Free