IGB50N65H5ATMA1

IGB50N65H5ATMA1图片1
IGB50N65H5ATMA1概述

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

IGBT 沟槽型场截止 650 V 80 A 270 W 表面贴装型 PG-TO263-3


得捷:
IGBT PRODUCTS


欧时:
Infineon IGB50N65H5ATMA1


艾睿:
Trans IGBT Chip N-CH 650V 80A 270000mW 3-Pin2+Tab D2PAK T/R


安富利:
IGBT PRODUCTS


Win Source:
IGB50N65 - INDUSTRY 14 / IGBT


IGB50N65H5ATMA1中文资料参数规格
技术参数

击穿电压集电极-发射极 650 V

额定功率Max 270 W

工作温度Max 175 ℃

工作温度Min -40 ℃

耗散功率Max 270000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

封装 TO-263-3

物理参数

工作温度 -40℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Charger, Storage

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买IGB50N65H5ATMA1
型号: IGB50N65H5ATMA1
描述:Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

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