晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0015 ohm, 10 V, 3.3 V
Description:
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance R DSon and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DSon of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.�
Summary of Features:
Benefits:
针脚数 7
漏源极电阻 0.0015 Ω
耗散功率 313 W
阈值电压 3.3 V
漏源极电压Vds 100 V
上升时间 28 ns
输入电容Ciss 650pF @50VVds
下降时间 82 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 313000 mW
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
封装 TO-263-7
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Telecom, Battery management
RoHS标准 RoHS Compliant
含铅标准 Lead Free