NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 25000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N3766 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N3767 美高森美 | 完全替代 | JANTX2N3766和2N3767的区别 |
JANTXV2N3767 M/A-Com | 功能相似 | JANTX2N3766和JANTXV2N3767的区别 |
SDT5906 Solitron Devices | 功能相似 | JANTX2N3766和SDT5906的区别 |