NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 25000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N3767 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N3767 Central Semiconductor | 功能相似 | JANTX2N3767和2N3767的区别 |
2N3766LEADFREE Central Semiconductor | 功能相似 | JANTX2N3767和2N3766LEADFREE的区别 |