JANTXV2N2222A

JANTXV2N2222A图片1
JANTXV2N2222A图片2
JANTXV2N2222A概述

Trans GP BJT NPN 50V 0.8A 0.5W1/2W 3Pin TO-18 Tube

Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

JANTXV2N2222A中文资料参数规格
技术参数

频率 300 MHz

极性 NPN

耗散功率 0.5 W

最小电流放大倍数hFE 75

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 500 mW

封装参数

引脚数 3

封装 TO-18-3

外形尺寸

封装 TO-18-3

物理参数

材质 Silicon

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

军工级 Yes

海关信息

ECCN代码 EAR99

数据手册

在线购买JANTXV2N2222A
型号: JANTXV2N2222A
制造商: ON Semiconductor 安森美
描述:Trans GP BJT NPN 50V 0.8A 0.5W1/2W 3Pin TO-18 Tube
替代型号JANTXV2N2222A
型号/品牌 代替类型 替代型号对比

JANTXV2N2222A

ON Semiconductor 安森美

当前型号

当前型号

JANS2N2222A

美高森美

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