JAN2N2904A

JAN2N2904A图片1
JAN2N2904A概述

PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR

This family of 2N2904A and 2N2905A switching transistors are military qualified up to the JANS level for high-reliability applications.  These devices are also available in a TO-5 package.

also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.


艾睿:
The PNP JAN2N2904A general purpose bipolar junction transistor, developed by Microsemi, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.


Verical:
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39 Bag


JAN2N2904A中文资料参数规格
技术参数

极性 PNP

耗散功率 0.6 W

击穿电压集电极-发射极 60 V

集电极最大允许电流 0.6A

最小电流放大倍数hFE 40 @150mA, 10V

额定功率Max 800 mW

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 600 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-39

外形尺寸

封装 TO-39

物理参数

材质 Silicon

工作温度 -65℃ ~ 200℃ TJ

其他

产品生命周期 Active

包装方式 Bag

符合标准

RoHS标准 Non-Compliant

含铅标准

数据手册

在线购买JAN2N2904A
型号: JAN2N2904A
描述:PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
替代型号JAN2N2904A
型号/品牌 代替类型 替代型号对比

JAN2N2904A

Microsemi 美高森美

当前型号

当前型号

JANTXV2N2904A

美高森美

完全替代

JAN2N2904A和JANTXV2N2904A的区别

JAN2N2904AL

美高森美

类似代替

JAN2N2904A和JAN2N2904AL的区别

2N2904A

Central Semiconductor

功能相似

JAN2N2904A和2N2904A的区别

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