JAN2N2219A

小信号双极NPN硅 SMALL SIGNAL BIPOLAR NPN SILICON

NPN SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/251

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JAN2N2219A GP BJT from Microsemi. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

Verical:
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag