PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
Thanks to , your circuit can handle high levels of voltage using the PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
极性 PNP
耗散功率 500 mW
击穿电压集电极-发射极 60 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 40 @150mA, 10V
额定功率Max 500 mW
工作温度Max 200 ℃
工作温度Min 65 ℃
耗散功率Max 500 mW
安装方式 Through Hole
引脚数 3
封装 TO-18-3
封装 TO-18-3
材质 Silicon
工作温度 -65℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N2906A Microsemi 美高森美 | 当前型号 | 当前型号 |
2N2906AL 美高森美 | 完全替代 | JANTX2N2906A和2N2906AL的区别 |
JANTXV2N2906A 美高森美 | 类似代替 | JANTX2N2906A和JANTXV2N2906A的区别 |
JAN2N2906AL 美高森美 | 类似代替 | JANTX2N2906A和JAN2N2906AL的区别 |