JANTX1N758AUR-1

JANTX1N758AUR-1图片1
JANTX1N758AUR-1图片2
JANTX1N758AUR-1图片3
JANTX1N758AUR-1概述

SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES

• 1N746AUR-1 THRU 1N759AUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127

• 1N4370AUR-1 THRU 1N4372AUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127

• LEADLESS PACKAGE FOR SURFACE MOUNT

• METALLURGICALLY BONDED


艾睿:
Now you can operate a diode in its reverse breakdown region by using a voltage regulator JANTX1N758AUR-1 zener diode from Microsemi. Its test current is 20 mA. Its maximum power dissipation is 500 mW. Its maximum leakage current is 1 μA. This device has a maximum regulator current of 40 mA. This zener device has a nominal voltage of 10 V and a voltage tolerance of 5%. It is made in a single configuration. This zener diode has an operating temperature range of -65 °C to 175 °C.


Chip1Stop:
Diode Zener Single 10V 5% 500mW 2-Pin DO-213AA


Verical:
Zener Diode Single 10V 5% 17Ohm 500mW 2-Pin DO-213AA Bag


JANTX1N758AUR-1中文资料参数规格
技术参数

容差 ±5 %

正向电压 1.1 V

耗散功率 500 mW

测试电流 20 mA

稳压值 10 V

正向电压Max 1.1V @200mA

额定功率Max 500 mW

工作温度Max 175 ℃

工作温度Min -65 ℃

封装参数

安装方式 Surface Mount

引脚数 2

封装 DO-213AA

外形尺寸

长度 3.7 mm

封装 DO-213AA

物理参数

工作温度 -65℃ ~ 175℃

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

JANTX1N758AUR-1引脚图与封装图
JANTX1N758AUR-1引脚图
JANTX1N758AUR-1封装图
JANTX1N758AUR-1封装焊盘图
在线购买JANTX1N758AUR-1
型号: JANTX1N758AUR-1
描述:SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
替代型号JANTX1N758AUR-1
型号/品牌 代替类型 替代型号对比

JANTX1N758AUR-1

Microsemi 美高森美

当前型号

当前型号

JANTXV1N758AUR-1

美高森美

功能相似

JANTX1N758AUR-1和JANTXV1N758AUR-1的区别

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