PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
The PNP general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
耗散功率 0.5 W
击穿电压集电极-发射极 60 V
最小电流放大倍数hFE 100 @150mA, 10V
最大电流放大倍数hFE 300
额定功率Max 500 mW
工作温度Max 200 ℃
工作温度Min 65 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 4
封装 SMD-4
封装 SMD-4
材质 Silicon
工作温度 -65℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Pack
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
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|---|---|---|
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