JANTX2N2219AL

NPN开关晶体管硅 NPN SWITCHING SILICON TRANSISTOR

NPN SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/251

艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN JANTX2N2219AL GP BJT from Microsemi. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

Chip1Stop:
Trans GP BJT NPN 50V 0.8A 3-Pin TO-5

Verical:
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-5 Tray