JANTXV2N2369A

JANTXV2N2369A图片1
JANTXV2N2369A图片2
JANTXV2N2369A概述

JANTXV Series 15V 360mW Through Hole NPN Silicon Transistor - TO-206AA TO-18

brings you the solution to your high-voltage BJT needs with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V.

JANTXV2N2369A中文资料参数规格
技术参数

耗散功率 0.6 W

击穿电压集电极-发射极 15 V

最小电流放大倍数hFE 20 @100mA, 1V

额定功率Max 360 mW

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 360 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-18

外形尺寸

封装 TO-18

物理参数

材质 Silicon

工作温度 -65℃ ~ 200℃ TJ

其他

产品生命周期 Active

包装方式 Bag

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买JANTXV2N2369A
型号: JANTXV2N2369A
描述:JANTXV Series 15V 360mW Through Hole NPN Silicon Transistor - TO-206AA TO-18
替代型号JANTXV2N2369A
型号/品牌 代替类型 替代型号对比

JANTXV2N2369A

Microsemi 美高森美

当前型号

当前型号

JANS2N2369A

美高森美

完全替代

JANTXV2N2369A和JANS2N2369A的区别

JANTX2N2369A

美高森美

类似代替

JANTXV2N2369A和JANTX2N2369A的区别

2N2369AJX

Semicoa Semiconductor

功能相似

JANTXV2N2369A和2N2369AJX的区别

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