JANTX Series 80V 1A Through Hole PNP Silicon Switching Transistor - TO-18
The three terminals of this PNP GP BJT from give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
耗散功率 0.5 W
输入电容 80 pF
上升时间 25 ns
击穿电压集电极-发射极 80 V
最小电流放大倍数hFE 100 @100mA, 5V
额定功率Max 500 mW
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 500 mW
安装方式 Through Hole
引脚数 3
封装 TO-18
封装 TO-18
材质 Silicon
工作温度 -55℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bag
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N4029 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N4033 NTE Electronics | 功能相似 | JANTX2N4029和2N4033的区别 |
JAN2N3467L 美高森美 | 功能相似 | JANTX2N4029和JAN2N3467L的区别 |
2N4029 Central Semiconductor | 功能相似 | JANTX2N4029和2N4029的区别 |