NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
Implement this NPN GP BJT from to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JAN2N1893 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N1893J Semicoa Semiconductor | 类似代替 | JAN2N1893和2N1893J的区别 |
2N1893JV Semicoa Semiconductor | 类似代替 | JAN2N1893和2N1893JV的区别 |
2N1893JX Semicoa Semiconductor | 类似代替 | JAN2N1893和2N1893JX的区别 |