TO-18 NPN 45V 0.03A
If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
极性 NPN
耗散功率 300 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.03A
最小电流放大倍数hFE 100 @10µA, 5V
额定功率Max 300 mW
工作温度Max 200 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Through Hole
引脚数 3
封装 TO-18-3
封装 TO-18-3
材质 Silicon
工作温度 -55℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bag
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JAN2N930 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N930 美高森美 | 类似代替 | JAN2N930和JANTX2N930的区别 |
JANTXV2N930 美高森美 | 功能相似 | JAN2N930和JANTXV2N930的区别 |
2N930 美高森美 | 功能相似 | JAN2N930和2N930的区别 |