JANTX2N5416S

PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR

This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications.  These devices are also available in the longer leaded TO-5 and low profile U4 and UA packaging.

艾睿:
Design various electronic circuits with this versatile PNP JANTX2N5416S GP BJT from Microsemi. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 750 mW. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

Chip1Stop:
Trans GP BJT PNP 300V 1A 3-Pin TO-39

Verical:
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag

Win Source:
TRANS PNP 300V 1A TO-39