JAN2N3485A

TO-46 PNP 60V 0.6A

Bipolar BJT Transistor PNP 60V 600mA 400mW Through Hole TO-46 TO-206AB

贸泽:
Bipolar Transistors - BJT Small-Signal BJT

艾睿:
Microsemi has the solution to your circuit&s;s high-voltage requirements with their PNP JAN2N3485A general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 400 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.