JANTXV2N3421S

TO-39 NPN 80V 3A

This family of high-frequency, epitaxial planar transistors feature low saturation voltage.    These devices are also available in TO-5 and low profile U4 packages.  also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

贸泽:
Bipolar Transistors - BJT Power BJT

艾睿:
Implement this NPN JANTXV2N3421S GP BJT from Microsemi to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 8 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

Verical:
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-39 Bag