JANTXV2N6849

JANTXV2N6849图片1
JANTXV2N6849概述

Trans MOSFET P-CH 100V 6.5A 3Pin TO-39

This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability applications.  This device is also available in a low profile U surface mount package.  also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages


得捷:
MOSFET P-CH 100V 6.5A TO205AF


艾睿:
Thanks to Microsemi, both your amplification and switching needs can be taken care of with one component: the JANTXV2N6849 power MOSFET. Its maximum power dissipation is 800 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


Verical:
Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39


Win Source:
MOSFET P-CH 100V 6.5A TO205AF / P-Channel 100 V 6.5A Tc 800mW Ta, 25W Tc Through Hole TO-205AF TO-39


JANTXV2N6849中文资料参数规格
技术参数

耗散功率 0.8 W

漏源极电压Vds 100 V

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 800mW Ta, 25W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-205

外形尺寸

封装 TO-205

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买JANTXV2N6849
型号: JANTXV2N6849
描述:Trans MOSFET P-CH 100V 6.5A 3Pin TO-39
替代型号JANTXV2N6849
型号/品牌 代替类型 替代型号对比

JANTXV2N6849

Microsemi 美高森美

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