JANTX2N1893

NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR

If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.