UB NPN 15V
This specially engineered NPN GP BJT from comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
型号/品牌 | 代替类型 | 替代型号对比 |
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JANTXV2N2369AUB Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N2369AUB 美高森美 | 完全替代 | JANTXV2N2369AUB和JANTX2N2369AUB的区别 |
2N2369ACSM Semelab | 功能相似 | JANTXV2N2369AUB和2N2369ACSM的区别 |
2N2369AUB 美高森美 | 功能相似 | JANTXV2N2369AUB和2N2369AUB的区别 |