TO-39 NPN 40V 3A
This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packaging. also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
贸泽:
Bipolar Transistors - BJT Power BJT
艾睿:
Trans GP BJT NPN 40V 3A 1000mW 3-Pin TO-39 Bag
Chip1Stop:
Trans GP BJT NPN 40V 3A 3-Pin TO-39
Verical:
Trans GP BJT NPN 40V 3A 1000mW 3-Pin TO-39 Bag
极性 NPN
耗散功率 1 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 3A
最小电流放大倍数hFE 40 @1.5A, 2V
最大电流放大倍数hFE 200
额定功率Max 1 W
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 1000 mW
安装方式 Through Hole
引脚数 3
封装 TO-39-3
封装 TO-39-3
材质 Silicon
工作温度 -65℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bag
RoHS标准 Non-Compliant
含铅标准
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
JANTX2N3506 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N3506 美高森美 | 完全替代 | JANTX2N3506和2N3506的区别 |
JANTX2N3506L 美高森美 | 类似代替 | JANTX2N3506和JANTX2N3506L的区别 |
JANTX2N3506AL 美高森美 | 类似代替 | JANTX2N3506和JANTX2N3506AL的区别 |