JANTX2N3811

JANTX2N3811图片1
JANTX2N3811概述

Trans GP BJT PNP 60V 0.05A 6Pin TO-78

The PNP general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 350 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

JANTX2N3811中文资料参数规格
技术参数

耗散功率 350 mW

击穿电压集电极-发射极 60 V

最小电流放大倍数hFE 300 @1mA, 5V

额定功率Max 350 mW

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 350 mW

封装参数

安装方式 Through Hole

引脚数 6

封装 TO-78-6

外形尺寸

封装 TO-78-6

物理参数

材质 Silicon

工作温度 -65℃ ~ 200℃ TJ

其他

产品生命周期 Obsolete

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买JANTX2N3811
型号: JANTX2N3811
描述:Trans GP BJT PNP 60V 0.05A 6Pin TO-78

锐单商城 - 一站式电子元器件采购平台